tn0205a/ad vishay siliconix new product document number: 70868 s-04279?rev. b, 16-jul-01 www.vishay.com 11-1 n-channel 20-v mosfet
v ds (v) r ds(on) ( ) i d (ma) 2.0 @ v gs = 4.5 v 250 20 2.5 @ v gs = 2.5 v 150
low on-resistance: 2.0 ? low threshold: 0.9 v (typ) fast switching speed: 35 ns 2.5-v or lower operation
ease in driving switches low offset (error) voltage low-voltage operation high-speed circuits low battery voltage operation drivers: relays, solenoids, lamps, hammers, display, memories battery operated systems solid state relay load/power switching-cell phones, pda sot-363 sc-70 (6-leads) s 1 1 3 g 1 2 d 2 6 4 5 d 1 g 2 s 2 order number: tn0205ad sot-323 sc-70 (3-leads) s d 1 2 3 g order number: tn0205a marking code: tn0205a: b l tn0205ad: d wl w = week code l = lot traceability
parameter symbol tn0205a tn0205ad unit drain-source voltage v ds 20 gate-source voltage v gs 8 v a t a = 25 c 250 continuous drain current (t j = 150 c) a t a = 70 c i d 200 ma pulsed drain current i dm 500 t a = 25 c 0.15 0.20 (total) maximum power dissipation a t a = 70 c p d 0.10 0.13 (total) w operating junction and storage temperature range t j , t stg ?55 to 150 c
parameter symbol tn0205a tn0205ad unit thermal resistance, junction-to-ambient a r thja 833 625 (total) c/w notes a. surface mounted on fr4 board, t 10 sec.
tn0205a/ad vishay siliconix new product www.vishay.com 11-2 document number: 70868 s-04279 ? rev. b, 16-jul-01
parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 10 a 20 24 gate-threshold voltage v gs(th) v ds = v gs , i d = 50 a 0.4 0.9 1.5 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 2 100 v ds = 20 v, v gs = 0 v 0.001 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 55 c 5 a v ds = 5.0 v, v gs = 2.5 v 120 160 on-state drain current a i d(on) v ds = 8.0 v, v gs = 4.5 v 400 800 ma a v gs = 2.5 v, i d = 150 ma 1.6 2.5 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 250 ma 1.2 2.0 forward transconductance a g fs v ds = 2.5 v, i d = 50 ma 200 ms diode forward voltage a v sd i s = 50 ma, v gs = 0 v 0.7 1.2 v dynamic total gate charge q g 350 450 gate-source charge q gs v ds = 5.0 v, v gs = 4.5 v, i d = 100 ma 25 pc gate-drain charge q gd 100 input capacitance c iss 20 output capacitance c oss v ds = 5.0 v, v gs = 0 v, f = 1 mhz 14 pf reverse transfer capacitance c rss ds gs 5 switching b, c turn-on delay time t d(on) 7 12 rise time t r v dd = 3.0 v, r l = 100 25 35 turn-off delay time t d(off) v dd = 3.0 v, r l = 100 i d = 0.25 a, v gen = 4.5 v, r g = 10 19 30 ns fall time t f 9 15 notes a. pulse test; pulse width 300 s, duty cycle 2%. vnoj b. for design only, not subject to production testing. c. switching time is essentially independent of operating temperature.
tn0205a/ad vishay siliconix new product document number: 70868 s-04279 ? rev. b, 16-jul-01 www.vishay.com 11-3 0.0 0.2 0.4 0.6 0.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 01234 0.00 0.25 0.50 0.75 1.00 1.25 01234 0 2 4 6 8 10 0 100 200 300 400 500 600 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 25 c t j = ? 55 c c rss c oss v ds = 6 v i d = 100 ma v gs = 4.5 v i d = 100 m a v gs = 4.5 v v gs = 2.5 v 2 v 125 c 2.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) q g ? total gate charge (pc) v ds ? drain-to-source voltage (v) i d ? drain current (a) capacitance on-resistance vs. junction temperature t j ? junction temperature ( c) 3 v v gs = 5 v 1.5 v 1 v 0 10 20 30 40 50 0 4 8 12 16 20 c iss 3.5 v 4.0 v i d ? drain current (a) i d ? drain current (a) r ds(on) ? on-resistance ( ? ) c ? capacitance (pf) v gs ? gate-to-source voltage (v) r ds(on) ? on-resistance ( ? ) ( normalized)
tn0205a/ad vishay siliconix new product www.vishay.com 11-4 document number: 70868 s-04279 ? rev. b, 16-jul-01 ? 0.4 ? 0.3 ? 0.2 ? 0.1 ? 0.0 0.1 0.2 ? 50 ? 25 0 25 50 75 100 125 150 i d = 50 a 1.2 0 2 4 6 8 0246810 0.001 3 i d = 250 ma 0.00 0.3 0.9 t j = 25 c t j = 125 c threshold voltage t j ? junction temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) 0.1 0.01 1 0.6 t j = ? 55 c r ds(on) ? on-resistance ( ? ) i s ? source current (a) v gs(th) ? variance (v)
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